maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6.0 v collector current i c 1.0 a collector current (peak) i cm 1.5 a power dissipation p d 0.9 w * operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 139 c/w * electrical characteristics: (t a =25c unless otherwise noted) typ symbol test conditions min npn pnp max units i cbo v cb =40v 100 na i ebo v eb =6.0v 100 na bv cbo i c =100a 40 v bv ceo i c =10ma 25 v bv ebo i e =100a 6.0 v v ce(sat) i c =50ma, i b =5.0ma 20 25 50 mv v ce(sat) i c =100ma, i b =10ma 35 40 75 mv v ce(sat) i c =200ma, i b =20ma 75 80 150 mv v ce(sat) i c =500ma, i b =50ma 130 150 250 mv v ce(sat) i c =800ma, i b =80ma 200 220 400 mv v ce(sat) i c =1.0a, i b =100ma 250 275 450 mv v be(sat) i c =800ma, i b =80ma 1.1 v v be(on) v ce =1.0v, i c =10ma 0.9 v h fe v ce =1.0v, i c =10ma 100 h fe v ce =1.0v, i c =100ma 100 300 h fe v ce =1.0v, i c =500ma 100 h fe v ce =1.0v, i c =1.0a 50 continued on next page ctlt3410-m521 (npn) CTLT7410-M521 (pnp) surface mount complementary silicon low v ce (sat) transistors tlm521 central semiconductor corp. tm r1 (27-april 2006) * fr-4 epoxy pcb with copper mounting pad area of 33mm 2 description: the central semiconductor ctlt3410-m521 and CTLT7410-M521 are low v ce (sat) transistors in a very small leadless 1x2mm surface mount package, designed for applications where small size, operational efficiency, and low energy consumption are prime requirements. due to the leadless package design these devices are capable of dissipating up to 3 times the power of similar devices in comparable sized surface mount packages. features: ? high operational efficiency ? high power to footprint ratio ? v ce(sat) @ 1.0a = 250mv (typ) ? high collector current ? small tlm 1x2mm case applications: ? dc/dc converters ? switching circuits ? lcd backlighting ? battery powered portable equipment ctlt3410-m521 (npn) marking code: cb CTLT7410-M521 (pnp) marking code: cd bottom view top view
central semiconductor corp. tm tlm521 case - mechanical outline ctlt3410-m521 (npn) CTLT7410-M521 (pnp) surface mount complementary silicon low v ce (sat) transistors r1 (27-april 2006) electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units f t v ce =10v, i c =50ma, f=100mhz 100 mhz c ob v cb =10v, i e =0, f=1.0mhz (ctlt3410-m521) 10 pf c ob v cb =10v, i e =0, f=1.0mhz (CTLT7410-M521) 15 pf lead code: 1) collector 2) collector 3) collector 4) base 5) emitter pin configuration ctlt3410-m521 (npn) marking code: cb CTLT7410-M521 (pnp) marking code: cd ctlt3410-m521 (npn) CTLT7410-M521 (pnp) suggested mounting pad layout for maximum power dissipation (dimensions in mm) for standard mounting refer to tlm521 package details
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